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Transparent conductive Al doped ZnO thin films produced by pulsed laser deposition♣

A. OG. DIKOVSKA1,* , P. A. ATANASOV1, I. G. DIMITROV1, S. Е. IMAMOVA1, T. VASILEV2

Affiliation

  1. Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Department of Physics and Astronomy, University of Sheffield, Hicks Building, Hounsflied Rd., Sheffield S3 7RH, United Kingdom

Abstract

Highly textured pure and Al-doped ZnO thin films have been produced by pulsed laser deposition, for applications such as transparent electrodes. The crystalline quality, optical transmission and electrical properties of the films strongly depended on the presence of the Al dopants. All the films showed 82 – 90% optical transparency in the visible (VIS) and near infrared (IR) spectral ranges. The films prepared at 300 °C substrate temperature and 0.05 mbar oxygen pressure, maintained during deposition, had a resistivity of 2.4×10 -4 Ω cm..

Keywords

TCOs, Al-doped ZnO films, Electrical and optical properties.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

A. OG. DIKOVSKA, P. A. ATANASOV, I. G. DIMITROV, S. Е. IMAMOVA, T. VASILEV, Transparent conductive Al doped ZnO thin films produced by pulsed laser deposition♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1517-1520 (2009)