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Transparent thin film transistors using optimized oxide active layers and gate insulator

F. GHERENDI1,*

Affiliation

  1. National Institute for Lasers, Plasma and Radiation Physics (NILPRP), Plasma Physics and Nuclear Fusion Laboratory, L 22, P.O. Box MG-36, 077125, Magurele-Bucharest, Romania

Abstract

Transparent thin film transistors (TTFT) in “top gate – bottom contacts” geometry were built using high conductivity In2O3 for the source-drain contacts, respectively highly resistive In2O3 as channel layer. The pulsed electron beam deposition (PED) method was used for growing the In2O3 thin films. Al2O3 and Y2O3 thin films grown by reactive RF magnetron sputtering in different conditions were studied in order to obtain an optimized gate film for the TTFT..

Keywords

Transparent thin film transistors, Dielectric oxide, Semiconductor oxide, Thin films, leakage, Breakdown, Pulsed electron deposition.

Submitted at: Oct. 16, 2013
Accepted at: Nov. 7, 2013

Citation

F. GHERENDI, Transparent thin film transistors using optimized oxide active layers and gate insulator, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 11-12, pp. 1445-1449 (2013)