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Tuning magneti c and electrical properties in Co doped ZnO films by defect engineering

WANG LIGUO1,* , ZHANG PEILING1

Affiliation

  1. School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo, 454000, People’s Republic of China

Abstract

High quality Zn 0.95 Co 0.05 O films with good reproducibility have been prepared by radio frequency ( magnetron sputtering at various preparation conditions. These films were characterized by using x ray diffraction, electrical transport, and magnetization measurements. The effect of the defects on the structural, magnetic, and electrical properties has been systematically investigated. It was found that the magnetization of Zn 0.95 Co 0.05 O films increases with in creasing defects, whereas the resistivity decreases with in creasing defects. The observed correlation between the magnetization, carrier concentration, and defect s demonstrate d the effect of the defect s in controlling the magnetic and electrical properties in Zn 0.95 Co 0.05 O films. This also indicate d that the magnet ic and electrical properties of Zn 0.95 Co 0.05 O films can be tuned by defect engineering.

Keywords

Magnetic property, Electrical property, Defect engineering.

Submitted at: July 9, 2012
Accepted at: March 13, 2014

Citation

WANG LIGUO, ZHANG PEILING, Tuning magneti c and electrical properties in Co doped ZnO films by defect engineering, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 300-305 (2014)