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Tuning the electronic, optical, and thermoelectric properties of puckered Si2STe monolayer via biaxial strain

H. RGHIOUI1,* , M. S. ZYANE1, M. DIANI1, A. MARJAOUI1, M. ZANOUNI1

Affiliation

  1. Materials, Systems and Energy Engineering Laboratory (MaSEEL) - UAE/U04FSTTg - Faculty of Sciences and Techniques of Tangier, Abdelmalek Essaâdi University, Morocco

Abstract

This study investigated how biaxial strain affects the electronic, optical, and thermoelectric properties of the Si2STe monolayer. The monolayer exhibits a direct bandgap semiconductor character of 0.70 eV in its unstrained state, which is effectively modulated by applying biaxial strain between -10% and +10%. Optical responses are enhanced under compressive strain and attenuated under tensile strain. Analysis of the thermoelectric performance reveals that, in the case of p-type doping, tensile strain promotes an increase in the figure of merit. These results highlight the potential of the monolayer as a functional material for advanced thermoelectric and optoelectronic applications..

Keywords

First-principles calculations, Optical properties, Puckered Si2STe, Strain effect.

Submitted at: Jan. 13, 2026
Accepted at: Oct. 5, 2026

Citation

H. RGHIOUI, M. S. ZYANE, M. DIANI, A. MARJAOUI, M. ZANOUNI, Tuning the electronic, optical, and thermoelectric properties of puckered Si2STe monolayer via biaxial strain, Journal of Optoelectronics and Advanced Materials Vol. 28, Iss. 9-10, pp. 478-489 (2026)