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S. A. KAMIL1,* , J. CHANDRAPPAN2, T. F. KRAUSS3, G. JOSE4
- Faculty of Applied Sciences, Universiti Teknologi Mara, 40450 Shah Alam, Selangor, Malaysia
- Centre for Process Innovation Limited (CPI), Neville Hamlin Building, NETPark, Thomas Wright Way, Sedgefield, County Durham, TS21 3FG, United Kingdom
- Department of Physics, University of York, York, YO10 5DD, United Kingdom
- Applied Photon Science, School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
An ultrafast laser plasma doping (ULPD) technique is used to dope Er3+ into silicon nitride (Si3N4)-on-silicon substrate. An adjustable refractive index (1.9-2.9) makes silicon nitride a highly suitable candidate for erbium-doped waveguide amplifier (EDWA) applications. The resultant layers consist of a mixture of target glass with Si3N4 and the structural and optical properties are varied according to fs-laser energy used. The use of higher fs-laser energy caused the formation of a thicker doped layer on Si3N4, predominantly with target material elements. However, surface doped layers were rougher when higher fs-laser energies were used. The doped layer exhibits spectroscopic characteristics of erbium with photoluminescence lifetimes varying from 3.95 to 9.59 ms..
Ultrafast lasers, Laser ablation, Optical materials, Er3+-doped glasses.
Submitted at: Jan. 14, 2019
Accepted at: Dec. 10, 2019
S. A. KAMIL, J. CHANDRAPPAN, T. F. KRAUSS, G. JOSE, Ultrafast laser plasma doping of Er3+ in Si3N4-on-silicon, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 11-12, pp. 710-716 (2019)
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