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Ultraviolet emission characteristics of chemical solution – derived zinc oxide films

KYU-SEOG HWANG1,* , SEUNG HWANGBO2, JIN-TAE KIM3

Affiliation

  1. Department of Applied Optics and Institute of Optoelectronic Technology, Nambu University, 864-1 Wolgye-dong, Gwangsan-gu, Gwangju 506-824, Republic of Korea
  2. Major in Photonic Engineering, Division of Electronic & Photonic Engineering, Honam University, 59-1 Seobong-dong, Gwangsan-gu, Gwangju 506-714, Korea
  3. Department of Photonic Engineering, College of Engineering, Chosun University, 375 Seosuk-dong, Dong-gu, Gwangju 501-759, Korea

Abstract

ZnO films showing near band edge emission were prepared on silica glass substrates by sol-gel using a zinc naphthenate precursor. As-deposited films were prefired at 250 °C for 60 min and at 350 °C for 30 min, followed by final annealing at 600 °C. Crystal structure, surface morphology, surface roughness, transmittance at visible spectra range and photoluminescence were examined. Highly oriented ZnO film was obtained by annealing at 600°C for the film prefired at 350 °C. Photoluminescence was discussed on the basis of the results of the crystallinity and surface structure..

Keywords

ZnO thin film, Sol-gel, Photoluminescence, XRD.

Submitted at: Jan. 15, 2008
Accepted at: March 17, 2008

Citation

KYU-SEOG HWANG, SEUNG HWANGBO, JIN-TAE KIM, Ultraviolet emission characteristics of chemical solution – derived zinc oxide films, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 3, pp. 533-535 (2008)