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M. A. MOHD SARJIDAN1,* , S. H. BASRI1, S. N. A. MOHD JOHARI2, Q. ABDUL AZIZ2, H. A. RAFAIE2, W. H. ABD MAJID1,*
- Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, Universiti Malaya, 50603 Kuala Lumpur, Malaysia
- Faculty of Applied Sciences, Universiti Teknologi MARA, 26400 Bandar Tun Abdul Razak Jengka, Pahang, Malaysia
Although zinc oxide (ZnO) is a well-known optoelectronic material, the study on switching properties with response to light emission is still limited. The recent work has shown a weak hysteresis response for an inject printed-based ZnO film after being shined with ultraviolet (UV) light. Addressing the issue, a sol-gel film-based ZnO memristor was fabricated and the bipolar effect of resistive switching (BERS) induced by a 254 nm UV illumination was investigated. The UV-Vis spectroscopy indicated that the ZnO thin film exhibited high absorption at 365 nm with a large energy gap of 3.23 eV, which is favorable for UV absorption and excitation. The current-voltage characteristics of the device shown a unique and significant behavior of negative differential resistance (NDR) effects after being illuminated by the UV light. The magnitude of the pinched hysteresis current loop is highly dependent on the exposure period of the UV light and the number of measurement cycles. This work could spark an idea of photo-induced memory devices in the future..
ZnO nanostructures, Sol-gel preparation, Electrical properties, Memristors, Sensors.
Submitted at: April 2, 2021
Accepted at: Nov. 24, 2021
M. A. MOHD SARJIDAN, S. H. BASRI, S. N. A. MOHD JOHARI, Q. ABDUL AZIZ, H. A. RAFAIE, W. H. ABD MAJID, UV-induced resistive switching behavior of sol-gel based ZnO nanostructures, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 11-12, pp. 560-563 (2021)
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