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MUHAMMAD AMMAR KHAN1,*
Affiliation
- Department of Physical and Numerical Sciences, Qurtuba university of Science and Information Technology, D. I. Khan, Pakistan
Abstract
Charge transport models are rapidly developing research area in the field of organic semiconductor devices. In this work organic materials have been theoretically studied and focusing on the electrical characteristic of organic polymers. On the basis of the modification of improved Current Density-Voltage formula-based charge transport model is applied to different hole only and electron only devices of various thickness at different temperature. By considering organic semiconductors are nondegenerate and solving the drift-diffusion equation, the mobility with respect to temperature and current-voltage data for all materials (fluctuation between theoretical curves and experimental data points) are good fitted. Taking into consideration of electric field dependence of mobility this research work gives good reasonable results with suitable parameters. This work also support the quantum chemical study that for polymer, poly{[N,N´-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5´-(2,2´-dithiophene)} [P(NDI2OD-T2),N2200], the electron mobility is observed to be more than the hole mobility. As compare to previous transport models this improved formula-based transport model is accurate because determination of results from the modified transport model are in good agreement with the complete numerical solutions. This work verifies that this formula-based charge transport model covers a large number of semiconducting materials and helps to modify the semiconductor devices in more precise form with better performance..
Keywords
Charge transport, Organic diode, Non-symmetric potential barriers, Polymers, New density of states (DOS).
Submitted at: Dec. 21, 2022
Accepted at: June 9, 2023
Citation
MUHAMMAD AMMAR KHAN, Validity of modified charge transport model of organic polymers for electron only and hole only devices, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 5-6, pp. 263-272 (2023)
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