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Visible erbium luminescence in Er3+ -doped SiO2–TiO2 films prepared by sol–gel method

JIANGUO ZHAO1,* , JIANWU FENG1, ERQING XIE2, AKE ZHAO1, ZHAOJUN LIU1

Affiliation

  1. College of Physics and Electronic Information, Luoyang Normal College, Luoyang, 471022, P R China
  2. School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, P R China

Abstract

Er3+ doped SiO2-TiO2 composite films were prepared by depositing the sols on the Si substrate surface using a spin-coating technique. The effect of annealed temperature and the ratio of Ti/Si on the microstructure and photoluminescence properties of composite films were studied. The structure of the samples was investigated by X-ray diffraction (XRD), and Raman technique. The photoluminescence (PL) spectra were recorded at room temperature. The results showed that the PL intensity was dependent on the annealing temperatures and the ratio of Ti/Si..

Keywords

Er3+ doped TiO2 -SiO2 ; Sol-gel method; Photoluminescence; energy transfer.

Submitted at: March 29, 2011
Accepted at: May 25, 2011

Citation

JIANGUO ZHAO, JIANWU FENG, ERQING XIE, AKE ZHAO, ZHAOJUN LIU, Visible erbium luminescence in Er3+ -doped SiO2–TiO2 films prepared by sol–gel method, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 5, pp. 466-470 (2011)