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Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors

V. I. MIKLA1,*

Affiliation

  1. Institute for Solid State Physics & Chemistry, Uzhgorod National University, Voloshina St.54, 88000 Uzhgorod, Ukraine

Abstract

Xerographic techniques, initially developed to characterize photoreceptors, are widely applicable to the study of amorphous and photoconductive insulators in a relatively thin and thick film forms. Initially, the high electric field (105 -106 V cm-1) due to corona charging is applied to sample films, and then the decay of the open-circuit surface potential is measured. The xerographic probe technique is a unique means to characterize electronic gap states. In particular, a map of states near mid-gap is determined by time-resolved analysis of the xerographic surface potential..

Keywords

Amorphous semiconductors, Selenium, Xerography.

Submitted at: July 15, 2010
Accepted at: Aug. 12, 2010

Citation

V. I. MIKLA, Xerographic spectroscopy of gap states: Se-rich amorphous semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 8, pp. 1621-1635 (2010)