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XPS analysis of n-GaP(111) native and etched surfaces

C. COTIRLAN1,* , C. LOGOFATU1, C. C. NEGRILA1, R. V. GHITA1, A. S. MANEA1, M. F. LAZARESCU1

Affiliation

  1. National Institute of Materials Physics, P.O.Box MG-7, 077125 Magurele, Romania

Abstract

The obtaining of a good ohmic contacts on the semiconductor material surfaces is strongly depending on the ability of the cleaning procedures to remove the native oxides and also, in the case of the compounds, to keep the surface stoichiometry. In this work, the XPS technique has been used in order to compare the efficiency of both, chemical etching and the Ar+ ion sputtering methods as to be suitable cleaning procedures in the case of n-GaP semiconductor compound surfaces preparation for the optoelectronic devices obtaining. The results have revealed some differences in the final surface composition/stoichiometry. The atomic ratio P/Ga within the outer layer of the single crystalline sample (~ 100 Å) has been evaluated. The presence of residual of surface oxides was recorded after performing the chemical cleaning..

Keywords

Chemical etching, Sputtering, Gallium phosphide, Surface composition, X-ray Photoelectron Spectroscopy.

Submitted at: Feb. 27, 2009
Accepted at: April 28, 2009

Citation

C. COTIRLAN, C. LOGOFATU, C. C. NEGRILA, R. V. GHITA, A. S. MANEA, M. F. LAZARESCU, XPS analysis of n-GaP(111) native and etched surfaces, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 4, pp. 386-390 (2009)