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XPS and electric analysis of the GaAs(100) nitridation

N. BACHIR BOUIADJRA1,* , Z. BENAMARA1, C. ROBERT2, L. BIDEUX2, B. GRUZZA2

Affiliation

  1. AMEL,University of DjillaliLiabès, 22000 de Sidi Bel Abbès, Algeria.
  2. LASMEA, UMR CNRS 6602, Campus Scientifique des Cezeaux, 63177 Aubière Cedex, France

Abstract

Gallium nitride is the most promising III-V semiconductor, in many applications. Due to its large direct band gap (3.4 eV), GaN can be dedicated as well to optoelectronics devices, e.g. blue lasers and photo-detectors as to the realisation of transistors operating in high-frequency and high-temperature regimes. Therefore, the technology of GaN films on standard substrates, GaAs, attracts special attention. In this paper, nitridation process of GaAs (100) substrates was studied in-situ using x-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical methods (I-V and C-V) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces. At first, native oxides were removed from the n-GaAs (100) surface by an argon ion bombardment. Next, a thin film of GaN was obtained by means of the nitridation on the GaAs substrate in an ultrahigh vacuum system using a radio-frequency plasma source (13.56 MHz), which allows nitridation at low pressures (10-4 Pa). The Schottky diode (Hg on the fabricated GaN/GaAs structures) was characterised by I-V and C-V analysis. The saturation current Is, the mean ideality factor n, the barrier height ΦBN, and the serial resistance Rs are determined from the I-V measurements. The C-V curves were controlled by the interfacial state density NSS(E) and by the deep donor levels in the semiconductor bulk. Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed..

Keywords

GaAs, GaN, XPS, I-V characterization, Schottky diode..

Submitted at: April 17, 2013
Accepted at: June 12, 2013

Citation

N. BACHIR BOUIADJRA, Z. BENAMARA, C. ROBERT, L. BIDEUX, B. GRUZZA, XPS and electric analysis of the GaAs(100) nitridation, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 5-6, pp. 405-409 (2013)