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ZnO thin film preparation using RF sputtering at various oxygen contents

N. EKEM1, Ş. KORKMAZ1, S. PAT1,* , M. Z. BALBAG2, N. E. ÇETİN1, M. ÖZMUMCU1, R. VLADOIU3, G. MUSA3

Affiliation

  1. Eskisehir Osmangazi University, Faculty of Art&Science, Physics Department, 26480 Eskisehir, Turkey
  2. Eskisehir Osmangazi University, Faculty of Education, Education of Science& Mathematics,26480 Eskisehir, Turkey
  3. Ovidius University, Constanţa, 900527, Romania

Abstract

In recent years, nanostructured ZnO films have been receiving particular attention because not only do they show many valuable properties as semiconducting materials, but also due to their relatively easy methods for synthesis. In this paper, ZnO thin films were prepared with RF sputtering at constant total gas pressure, with different oxygen and argon contents. Different working parameters such distance between the cathode and sample, sample dimensions, as well as variable interelectrodic spaces were investigated. Our aim is to define the optimum percentage of oxygen contents for ZnO thin films production. Thicknesses, refractive index, thickness homogeneity, UV spectra, band-gap energy, absorption spectra of the obtained thin films were carried out in this study..

Keywords

ZnO, Thin Films, RF Sputtering, UV spectra, Refractive index, Absorption spectra.

Submitted at: Nov. 5, 2008
Accepted at: Dec. 10, 2008

Citation

N. EKEM, Ş. KORKMAZ, S. PAT, M. Z. BALBAG, N. E. ÇETİN, M. ÖZMUMCU, R. VLADOIU, G. MUSA, ZnO thin film preparation using RF sputtering at various oxygen contents, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 12, pp. 3279-3282 (2008)