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Page 1 of 2.
- Photo-induced deformations in chalcogenide glass: Atomic or optical force?
K. TANAKA , M. MIKAMI
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1885-1890 (2009) - Combined method of spectroscopic ellipsometry and photometry as an efficient tool for the optical characterisation of chalcogenide thin films
D. FRANTA , D. NEČAS , I. OHLÍDAL , M. HRDLIČKA , M. PAVLIŠTA , M. FRUMAR , M. OHLÍDAL
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1891-1898 (2009) - Effect of photo-oxidation on the photodiffusion of silver in germanium chalcogenide glasses
M. MITKOVA , A. KOVALSKIY , H. JAIN , Y. SAKAGUCHI
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1899-1906 (2009) - Improving the structural description of high-temperature liquid GeSe2 from ab initio molecular dynamics simulations
M. MICOULAUT , C. MASSOBRIO
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1907-1914 (2009) - Barrier-cluster model – the base for understanding of the optical phenomena in non-crystalline semiconductors
I. BANIK
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1915-1930 (2009) - Photoconductivity in chalcogenide glasses on the base of the barrier-cluster model
I. BANIK
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1931-1945 (2009) - The quantitative approach to structure identification of chalcogenide, oxide and halide glass forming substances
V. S. MINAEV
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1946-1949 (2009) - The physicochemical basis of the exothermic effect at DTA and DSC curves below glass transition temperature in chalcogenide and oxide glass forming substances
V. S. MINAEV , S. P. TIMOSHENKOV , V. V. KALUGIN , S. I. KOVALEV , S. N. NOVIKOV , V. P. VASILIEV
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1950-1953 (2009) - Registration of low intensity IR radiation using modal interference in an optical fiber
I. CULEAC , I. NISTOR , M. IOVU , A. ANDRIESH
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1954-1958 (2009) - Direct surface relief formation in As0.2Se0.8 layers
M. TRUNOV , P. LYTVYN , V. TAKATS , I. CHARNOVICH , S. KOKENYESI
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1959-1962 (2009) - Surface relief formation during holographic recording
U. GERTNERS , J. TETERIS
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1963-1966 (2009) - Fabrication of submicrometer periodic structures using interference lithography and two-layer chalcogenide photoresist
I. Z. INDUTNYI , M. POPESCU , A. LORINCZI , F. SAVA , V. I. MIN’KO , P. E. SHEPELIAVYI , V. A. DAN’KO
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1967-1971 (2009) - Programming speed, cycle-life and failure mechanisms in binary and multistate ovonic (phase-change) chalcogenide memory devices
S. KOSTYLEV
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1972-1982 (2009) - Tellurium based phase change materials
A. VELEA
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1983-1987 (2009) - A study on the crystallization speed and thermal stability of N-doped Ge2Sb2Te5 thin film during amorphous-tocrystalline phase transition.
KI-HO SONG , JUN-HYONG KIM , JAE-HEE SEO , HYUN-YONG LEE
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1988-1994 (2009) - Comparative structural and optical properties of Ge2Sb2Te5, In0.3Ge2Sb2Te5 and Se2Sb2Te6 thin films
N. QAMHIEH , S. T. MAHMOUD , H. GHAMLOUCHE
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1995-1999 (2009) - Matrix-assisted photo-amorphization effect in As40S30Se30 films with silver
M. POPESCU , K. PETKOV , F. SAVA , J. TASEEVA , A. LŐRINCZI , A. VELEA
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2000-2003 (2009) - New luminescent compounds based on chalcogenides and organic materials
M. S. IOVU , A. M. ANDRIESH , V. I. VERLAN , S. A. BUZURNIUC , I. P. CULEAC , YU. H. NISTOR , V. ZUBAREVA
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2004-2007 (2009) - Charge state dependent darkening in AsSe thin films induced by slow multiply charged Ne ions
I. IVÁN , S. BIRI , J. PÁLINKÁS , S. KÖKÉNYESI
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2008-2010 (2009) - Ageing phenomena in thin amorphous AsxSe100-x films
M. S. IOVU , I. A. VASILIEV , O. I. SHPOTYUK , E. P.COLOMEICO
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2011-2018 (2009) - Effect of temperature on the optical parameter of amorphous Sb-Se thin films
FALAH I. MUSTAFA , SHIKHA GUPTA , N. GOYAL , S. K. TRIPATHI
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2019-2023 (2009) - Glass formation in the GeSe2-Sb2Se3-AgI system
V. VASSILEV , G. VASSILEV , J. DIKOVA , K. PETKOV
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2024-2028 (2009) - Crystallization of Se-Te glasses in ultrasonic field
E. A. CHECHETKINA , E. V. KISTEREV , E. B. KRYUKOVA , A. I. VARGUNIN
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2029-2034 (2009) - Optical properties of Er-doped As-S-Ge chalcogenide glasses
V. B. PETROVIĆ , D. D. ŠTRBAC , I. O. GUT , S. R. LUKIĆ
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2035-2038 (2009) - Modification of the optical constants in amorphous Sb2Se3:Sn thin films under the illumination and heat treatment
D. V. HAREA , M. A. IOVU , O. IASENIUC , E. P. COLOMEICO , A. MESHALKIN , M. S. IOVU
Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2039-2043 (2009)
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