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I agree, do not show this message again.Vol. 13, Number 11-12, Issue November-December 2011, Year 2011
Page 1 of 2.
- Glass homogeneity precursive to self-organization
P. BOOLCHAND , S. BHOSLE , K. GUNASEKERA , K. VIGNAROOBAN , S. CHAKRABORTY
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1353-1358 (2011) - Non-crystalline SiO2: processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites
G. LUCOVSKY , J. W KIM , K. WU , D. ZELLER , B. PAPAS , J. L. WHITTEN
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1359-1363 (2011) - Recombination processes, Meyer-Neldel rule and non-exponential decay in disordered semiconductors
I. BANIK
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1364-1376 (2011) - The amount of ionic character - measure for oxide basicity
P. BALTĂ
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1377-1384 (2011) - The Dembovsky’s theory of glass formation
E. A. CHECHETKINA
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1385-1392 (2011) - Some features of the glass transition process by the example of chalcogenide glass systems
V. MINAEV , S. TIMOSHENKOV , V. KALUGIN
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1393-1399 (2011) - Influence of Bi doping on electrical and optical properties of phase change material Ge2Sb2Te5
P. LAZARENKO , HUY PHUC NGUYEN , S. KOZYUKHIN , A. SHERCHENKOV
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1400-1404 (2011) - Phtalocyanine and meso-tetraphenylporphine effects on TiO2/CdS nanocomposites photoactivity
M.C. ROSU , R.C. SUCIU , M. D. LAZAR , I. BRATU
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1405-1411 (2011) - Optical properties of amorphous As45S15Se40 thin films
M. S. IOVU , I. A.COJOCARU , V. G. BENEA , E. P. COLOMEICO
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1412-1416 (2011) - On the compositional dependence of refractive index in amorphous GexAsxSe1-2x films
M. S. IOVU , V. G. BENEA , E. P. COLOMEICO , M. A. IOVU , I. A. COJOCARU , O. I. SHPOTYUK , R. YA. GOLOVCHAK
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1417-1422 (2011) - Multiphonon tunnel ionization of negative-U centers – the origin of switching and memory effects in chalcogenide glasses
N. A. BOGOSLOVSKIY , K. D. TSENDIN
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1423-1428 (2011) - Comparison of new and old generations of the phase change memory chalcogenide materials and devices
K.D. TSENDIN , N. A. BOGOSLOVSKIY
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1429-1432 (2011) - The composite materials on the basis of As2S3 glass containing crystals ZnS and ZnS doped with Cr(2+)
E. V. KARAKSINA , R. A. MIRONOV , R. M. SHAPOSHNIKOV , L. A. KETKOVA
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1433-1436 (2011) - Equilibrium in GeI4–S(Se) systems
A. P. VELMUZHOV , A. A. SIBIRKIN , V. S. SHIRYAEV , M. F. CHURBANOV
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1437-1441 (2011) - Optical properties of silver doped amorphous films of composition Ge28S72 and Ge22Ga6S72
M. BARTOS , T. WAGNER , S. VALKOVA , M. PAVLISTA , M. VLCEK , L. BENEŠ , M. FRUMAR
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1442-1446 (2011) - TL and OSL dosimetric properties of Ge30As4S66 chalcogenic glass system doped with DY
V. BENEA , A. TIMAR-GABOR , M. IOVU , E. COLOMEICO , C. COSMA , O.I. SHPOTYUK
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1447-1449 (2011) - Nanocarbon embedded chalcogenides. Onion-like model
M. POPESCU , F. SAVA , A. LŐRINCZI , A. VELEA , I. D. SIMANDAN
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1450-1453 (2011) - Electrical properties of GeSe2-Sb2Se3-PbTe thin films
B. STEFANOVA , D. NESHEVA , K. PETKOV , M. RADONOVA , G. VASSILEV , V. VASSILEV
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1454-1457 (2011) - On the preparation of zinc sulphide powders from singlesource molecular precursors: thermal descomposition of zinc diethyldithiocarbamate
A.-I. CADIŞ , E.-J. POPOVICI , E. BICA , I. PERHAIŢA , L. BARBU-TUDORAN
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1458-1461 (2011) - Light intensity and its polarization relation to the photoinduced mass movement in thin layers of chalcogenide vitreous semiconductors
U. GERTNERS , J. TETERIS
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1462-1466 (2011) - Spatial frequency doubling of interference lithographic structure using two-layer chalcogenide photoresist
I. Z. INDUTNYI , V. A. DAN’KO , V. I. MYN’KO , P. E. SHEPELIAVYI , O. V. BEREZNYOVA
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1467-1469 (2011) - On the adhesion features of Ag nanolayers on differently-passivated Si(001)(2x1) substrates
A. IOANID , M. DIEACONU , S. ANTOHE
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1470-1477 (2011) - Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
M. S. IOVU , I. A. VASILIEV , E. P. COLOMEICO , O. SHPOTYUK
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1478-1482 (2011) - Optical properties of phase change memory Ge1Sb2Te4 glasses
M. S. IOVU , E. P. COLOMEICO , V. G. BENEA , M. POPESCU , A. LORINCZI , A. VELEA
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1483-1486 (2011) - High density optical recording in thin chalcogenide films
A. A. KRYUCHYN , V. V. PETROV , S. O. KOSTYUKEVYCH
Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1487-1492 (2011)
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